- 您现在的位置：买卖IC网 > Sheet目录507 > SGH80N60UFDTU (Fairchild Semiconductor)IGBT HI PERFORM 100V 28A TO-3P
4500
4000
Common Emitter
V GE = 0V, f = 1MHz
T C = 25 ℃
500
Common Emitter
V CC = 300V, V GE = ± 15V
I C = 40A
3500
3000
2500
Cies
T C = 25 ℃
T C = 125 ℃
Ton
Tr
100
2000
1500
Coes
1000
500
0
Cres
20
1
10
30
1
10
70
Collector - Emitter Voltage, V CE [V]
Fig 7. Capacitance Characteristics
Gate Resistance, R G [ ? ]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
2000
1000
Common Emitter
V CC = 300V, V GE = ± 15V
I C = 40A
T C = 25 ℃
T C = 125 ℃
Toff
5000
Common Emitter
V CC = 300V, V GE = ± 15V
I C = 40A
T C = 25 ℃
T C = 125 ℃
Eoff
Eon
100
20
Tf
Tf
1000
100
Eoff
1
10
80
1
10
80
Gate Resistance, R G [ ? ]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
500
Common Emitter
Gate Resistance, R G [ ? ]
Fig 10. Switching Loss vs. Gate Resistance
2000
Common Emitter
V CC = 300V, V GE = ± 15V
R G = 5 ?
T C = 25 ℃
T C = 125 ℃
1000
V CC = 300V, V GE = ± 15V
R G = 5 ?
T C = 25 ℃
T C = 125 ℃
Toff
100
Tf
Toff
100
Ton
Tf
Tr
10
20
10
20
30
40
50
60
70
80
10
20
30
40
50
60
70
80
Collector Current, I C [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
?2002 Fairchild Semiconductor Corporation
Collector Current, I C [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGH80N60UFD Rev. B1
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
SGH80N60UFTU
IGBT HI PERFORM 00V 40A TO-3P
SGL160N60UFDTU
IGBT ULTRA FAST 600V 160A TO264
SGL50N60RUFDTU
IGBT 80A 600V W/DIODE TO-264
SGP10N60RUFDTU
IGBT W/DIODE 600V 10A TO-220
SGP23N60UFDTU
IGBT W/DIODE 600V TO-220
SGP23N60UFTU
IGBT W/DIODE 600V TO-220-3
SGPD.12A
EVAL KIT GPS SGP.12A ANTENNA
SGPD.15A
EVAL KIT GPS SGP.15A ANTENNA
相关代理商/技术参数
SGH80N60UFTU
功能描述:IGBT 晶体管 Dis High Perf IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
SGHA36AT0400
制造商:General Electric Company 功能描述:SGH 3P 600V 400A
SGHD-002GA-P0.2
功能描述:CONN TERMINAL GHD 30-26AWG RoHS:是 类别:连接器，互连式 >> 矩形 - 触点 系列:GHD 标准包装:90,000 系列:* 其它名称:035021-1301350211-1301350211301
SGHL04600
制造商:Hammond Manufacturing 功能描述:HEATER FAN
SGHT00Y SGH00Y WAF
制造商:Fairchild Semiconductor Corporation 功能描述:
SGHT08Y SGH00Y WAF
制造商:Fairchild Semiconductor Corporation 功能描述:
SGI02N120
功能描述:IGBT 晶体管 FAST IGBT NPT TECH 1200V 2A RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
SGI02N120XKSA1
制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 6.2A 3-Pin(3+Tab) TO-262 Tube 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 1200V 6.2A 62W TO262-3